Skip to main content

onsemi BC80725MTF

BC807 Series 45 V CE Breakdown .8 A PNP Epitaxial Silicon Transistor - SOT-23

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
960 µm
Length
2.9 mm
Width
1.3 mm

Physical

Select to search
related specs
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
-700 mV
Collector Emitter Voltage (VCEO)
45 V
Current
8:00 AM
Element Configuration
8 A
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
960 µm
Max Breakdown Voltage
45 V
Max Collector Current
800 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
310 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
310 mW
Transition Frequency
100 MHz
Voltage
45 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us

Alternative BJTs