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onsemi BC640TA

BC640 Series 80 V 1 A 1 W PNP Epitaxial Silicon Transistor - TO-92-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
4.58 mm
Length
4.58 mm
Width
3.86 mm

Physical

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Case/Package
TO-92-3
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
240.007063 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-100 V
Collector Emitter Breakdown Voltage
-80 V
Collector Emitter Saturation Voltage
-500 mV
Collector Emitter Voltage (VCEO)
-80 V
Current
1:00 AM
Current Rating
1 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
8.77 mm
Max Breakdown Voltage
80 V
Max Collector Current
-1 A
Max Frequency
100 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
1 W
Transition Frequency
100 MHz
Voltage
80 V
Voltage Rating (DC)
IBS

Compliance Documents

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