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onsemi BC639ZL1G

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-92-3
Number of Pins
3

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1:00 AM
Element Configuration
1 A
Emitter Base Voltage (VEBO)
5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
25
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
80 V

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