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onsemi BC556ABU

Bipolar (BJT) Single Transistor, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 110

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

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Case/Package
TO-92
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
179 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-250 mV
Collector Emitter Voltage (VCEO)
-65 V
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
150 MHz
Gain Bandwidth Product
150 MHz
hFE Min
110
Max Collector Current
-100 mA
Max Frequency
10 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
500 mW
Transition Frequency
150 MHz
Voltage Rating (DC)
-65 V

Compliance Documents

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