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onsemi BC337G

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 210MHz

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

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Case/Package
TO-92-3
Contact Plating
Copper, Silver, Tin
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
45 V
Current Rating
800 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
210 MHz
Gain Bandwidth Product
210 MHz
hFE Min
100
Max Collector Current
800 mA
Max Frequency
210 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
210 MHz
Voltage Rating (DC)
45 V

Compliance Documents

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