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onsemi BAS16WT1G

Rectifier Diode, 1 Phase, 1 Element, 0.25A, 100V V(RRM), Silicon

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
889 µm
Radiation Hardening
Standard
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
889 µm
Length
2.1844 mm
Width
1.3462 mm

Physical

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Case/Package
SC
Contact Plating
Tin
Number of Pins
-55 °C

Supply Chain

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Lifecycle Status
Production

Technical

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Average Rectified Current
200 mA
Breakdown Voltage
75 V
Capacitance
2 pF
Element Configuration
Single
Forward Current
150 mA
Forward Voltage
1.25 V
Max Breakdown Voltage
75 V
Max Forward Surge Current (Ifsm)
500 mA
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
1 µA
Max Reverse Voltage (DC)
1 µA
Max Surge Current
500 mA
Min Operating Temperature
-55 °C
Output Current
200 mA
Packaging
Cut Tape
Peak Non-Repetitive Surge Current
500 mA
Peak Reverse Current
1 µA
Polarity
1 µA
Power Dissipation
200 mW
Recovery Time
6 ns
Reverse Recovery Time
6 ns
Termination
SMD/SMT

Compliance Documents

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