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onsemi ATP114-TL-H

Power Field-Effect Transistor, 35A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
16 mΩ

Physical

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Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
55 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
300 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4 nF
Max Operating Temperature
150 °C
Max Power Dissipation
60 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
Tape and Reel
Rds On Max
16 mΩ
Rise Time
200 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
19 ns

Compliance Documents

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