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onsemi ATP104-TL-H

Power Field-Effect Transistor, 75A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
6.4 mΩ

Dimensions

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Height
1.5 mm
Length
6.5 mm
Pitch
2 mm
Width
7.3 mm

Physical

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Contact Plating
Gold
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-75 A
Drain to Source Resistance
13.5 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
260 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.95 nF
Max Operating Temperature
150 °C
Max Power Dissipation
60 W
Min Operating Temperature
-55 °C
Number of Contacts
50
Number of Elements
1
Number of Rows
2
Packaging
Tape and Reel
Power Dissipation
60 W
Rds On Max
8.4 mΩ
Resistance
6.4 mΩ
Rise Time
8.4 mΩ
Termination
520 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

Compliance Documents

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