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onsemi 2SJ652-1E

Power Field-Effect Transistor, 28A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
19.5 mm

Physical

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Case/Package
TO-220
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-28 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
28.5 mΩ
Drain to Source Voltage (Vdss)
-60 V
Element Configuration
Single
Fall Time
180 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.36 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
30 W
Rds On Max
38 mΩ
Rise Time
210 ns
Turn-Off Delay Time
310 ns
Turn-On Delay Time
33 ns

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