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onsemi 2SC5566-TD-E

Bipolar Transistor, 50V, 4A, Low VCE(sat), (PNP)NPN Single PCP

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

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Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
85 V
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
400 MHz
Gain Bandwidth Product
400 MHz
hFE Min
200
Max Breakdown Voltage
50 V
Max Collector Current
4 A
Max Frequency
1 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.3 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.3 W
Transition Frequency
400 MHz

Compliance Documents

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