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onsemi 2SC3649T-TD-E

Bipolar Transistor, 160V, 1.5A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200-400

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

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Case/Package
SOT-89
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
130 mV
Collector Emitter Voltage (VCEO)
160 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
120 MHz
Gain Bandwidth Product
120 MHz
Max Collector Current
1.5 A
Max Frequency
120 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
-55 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
Tape and Reel
Transition Frequency
120 MHz

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