Name: 2N7002ET1G
Availability: OutOfStock

Continuous Drain Current (ID)

260 mA

Drain to Source Breakdown Voltage

60 V

Drain to Source Resistance

860 mΩ

Drain to Source Voltage (Vdss)

60 V

Element Configuration

Single

Fall Time

1.2 ns

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

26.7 pF

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Max Power Dissipation

300 mW

Min Operating Temperature

-55 °C

Nominal Vgs

1 V

Number of Channels

1

Number of Elements

1

Packaging

Tape and Reel

Power Dissipation

300 mW

Rds On Max

2.5 Ω

Resistance

2.5 Ω

Rise Time

1.2 ns

Threshold Voltage

1 V

Turn-Off Delay Time

4.8 ns

Turn-On Delay Time

1.7 ns

onsemi 2N7002ET1G

Product Details

Compliance

Dimensions

Physical

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