Skip to main content

onsemi 2N6491G

Transistor, Bipolar; Si; PNP; Power; VCEO 80VDC; IC 15A; PD 75W; TO-220AB; VCBO 90VDC

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
15.75 mm
Length
10.28 mm
Width
4.82 mm

Physical

Select to search
related specs
Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
90 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
3.5 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
15 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
5 MHz
Gain Bandwidth Product
5 MHz
hFE Min
20
Max Collector Current
15 A
Max Frequency
5 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
1.8 W
Transition Frequency
5 MHz
Voltage Rating (DC)
-80 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us