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onsemi 2N6427

Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
6.35 mm
Length
6.35 mm
Width
IBS

Physical

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Case/Package
TO-92
Mount
Through Hole
Number of Pins
3
Weight
201 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1.2 V
Collector Emitter Voltage (VCEO)
40 V
Continuous Collector Current
500 mA
Current Rating
1.2 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
12 V
hFE Min
10000
Max Breakdown Voltage
40 V
Max Collector Current
1.2 A
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Voltage Rating (DC)
40 V

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