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onsemi 2N5684G

Transistor, Bipolar, Si, PNP, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
26.67 mm
Length
38.8366 mm
Width
IBS

Physical

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Case/Package
TO-204-3
Contact Plating
Copper, Silver, Tin
Number of Pins
2

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
2 MHz
Gain Bandwidth Product
2 MHz
hFE Min
15
Max Collector Current
50 A
Max Operating Temperature
200 °C
Max Power Dissipation
300 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
300 W
Transition Frequency
2 MHz
Voltage Rating (DC)
-80 V

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