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onsemi 2N5088TAR

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

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Case/Package
TO-92-3
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
35 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
4.5 V
Frequency
3 V
Gain Bandwidth Product
50 MHz
hFE Min
300
Max Breakdown Voltage
30 V
Max Collector Current
50 mA
Max Frequency
50 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
50 MHz
Voltage Rating (DC)
30 V

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