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onsemi 2N4403TAR

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

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Case/Package
TO-92-3
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
750 mV
Collector Emitter Voltage (VCEO)
40 V
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Frequency
200 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
625 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-40 V

Compliance Documents

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