Skip to main content

onsemi 1N4448TR

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Diameter
1.91 mm
Height
1.91 mm
Length
6.35 mm
Width
6.35 mm

Physical

Select to search
related specs
Contact Plating
Tin
Mount
Through Hole
Number of Pins
2
Weight
4.535924 g

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Average Rectified Current
200 mA
Capacitance
2 pF
Current
2 A
Current Rating
200 mA
Element Configuration
Single
Forward Current
200 mA
Forward Voltage
1 V
Max Forward Surge Current (Ifsm)
1 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Repetitive Reverse Voltage (Vrrm)
100 V
Max Reverse Voltage (DC)
100 V
Max Surge Current
4 A
Min Operating Temperature
-55 °C
Output Current
200 mA
Packaging
Cut Tape
Peak Non-Repetitive Surge Current
4 A
Peak Reverse Current
25 nA
Polarity
Standard
Power Dissipation
500 mW
Recovery Time
4 ns
Reverse Recovery Time
4 ns
Reverse Voltage
100 V
Voltage
75 V
Voltage Rating (DC)
100 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us