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onsemi 1HN04CH-TL-W

N-Channel Power MOSFET 100 V, 8 , 270 mA

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
8 Ω

Dimensions

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Height
1.05 mm

Physical

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Case/Package
TO-236-3
Contact Plating
Tin
Mount
-55 °C

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
270 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
6 Ω
Drain to Source Voltage (Vdss)
6 Ω
Fall Time
39 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
15 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
600 mW
Rds On Max
8 Ω
Rise Time
7.4 ns
Turn-Off Delay Time
58 ns
Turn-On Delay Time
10 ns

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