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NXP Semiconductors BUK7510-55AL127
Product Details
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Compliance
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Radiation Hardening
No
RoHS
4 mΩ
Physical
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Case/Package
SOT
Contact Plating
Tin
Number of Pins
3
Technical
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Continuous Drain Current (ID)
122 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
10 mΩ
Drain to Source Voltage (Vdss)
10 mΩ
Element Configuration
Single
Fall Time
95 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
8.26 nF
Max Dual Supply Voltage
55 V
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
-55 °C
Power Dissipation
300 W
Rds On Max
4 mΩ
Rise Time
117 ns
Turn-Off Delay Time
132 ns
Turn-On Delay Time
33 ns