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NXP Semiconductors BLS6G3135-120

S Band Si N-channel Rf Power Mosfet

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Number of Pins
3

Technical

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Continuous Drain Current (ID)
7.2 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
160 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Frequency
3.5 GHz
Gain
11 dB
Gate to Source Voltage (Vgs)
13 V
Max Operating Temperature
150 °C
Max Power Dissipation
120 W
Min Operating Temperature
-65 °C
Output Power
120 W

Compliance Documents

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