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NXP Semiconductors BFU725F/N1,115
Product Details
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Compliance
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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Physical
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Case/Package
SO
Mount
Surface Mount
Number of Pins
4
Technical
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Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
2.8 V
Collector Emitter Voltage (VCEO)
2.8 V
Continuous Collector Current
40 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
550 mV
Frequency
55 GHz
Gain
24 dB
hFE Min
40
Max Breakdown Voltage
2.8 V
Max Collector Current
40 mA
Max Operating Temperature
150 °C
Max Power Dissipation
136 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
136 mW
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
136 mW
Transition Frequency
55 GHz