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NXP Semiconductors BFU660F,115
Product Details
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Compliance
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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Physical
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Mount
Surface Mount
Number of Pins
4
Technical
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Collector Base Voltage (VCBO)
16 V
Collector Emitter Breakdown Voltage
5.5 V
Collector Emitter Voltage (VCEO)
5.5 V
Continuous Collector Current
30 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2.5 V
Frequency
21 GHz
Gain
21 dB
Gain Bandwidth Product
21 GHz
hFE Min
90
Max Breakdown Voltage
5.5 V
Max Collector Current
60 mA
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
225 mW
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
225 mW
Transition Frequency
21 GHz