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NXP Semiconductors BFU590QX

BFU590Q Series 12 V 200 mA 2 W NPN Wideband Silicon RF Transistor - SOT-89-3

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT-89-3
Contact Plating
Tin
Mount
Surface Mount

Technical

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Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
16 V
Continuous Collector Current
80 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
6.5 dB
Gain Bandwidth Product
8 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
200 mA
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
8 GHz

Compliance Documents

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