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NXP Semiconductors BFU580GX

BFU580G Series 12 V 60 mA NPN Wideband Silicon RF Transistor - SOT-223

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-261-4
Contact Plating
Tin
Mount
Surface Mount

Technical

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Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
16 V
Continuous Collector Current
30 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
10.5 dB
Gain Bandwidth Product
11 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
60 mA
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
11 GHz

Compliance Documents

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