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NXP Semiconductors BFQ67W,115

10V 300mW 50mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-323
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3
Weight
59.987591 mg

Technical

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Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
10 V
Collector Emitter Voltage (VCEO)
10 V
Continuous Collector Current
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2.5 V
Frequency
8 GHz
Gain Bandwidth Product
8 GHz
Max Breakdown Voltage
10 V
Max Collector Current
50 mA
Max Frequency
8 GHz
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
8 GHz

Compliance Documents

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