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NXP Semiconductors BF722

NPN HIGH-VOLTAGE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

Compliance

RoHS
Compliant

Dimensions

Height
1.7 mm
Length
6.7 mm
Width
3.7 mm

Physical

Case/Package
SOT-223
Mount
Surface Mount

Technical

Collector Base Voltage (VCBO)
250 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
250 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
1.2 W
Min Operating Temperature
-65 °C

Compliance Documents

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