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NXP Semiconductors AFT20P060-4NR3

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Halogen Free
Halogen Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Contact Plating
Tin
Mount
-40 °C
Number of Pins
4
Weight
3.081111 g

Technical

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Current Rating
10 µA
Drain to Source Breakdown Voltage
10 µA
Drain to Source Voltage (Vdss)
65 V
Element Configuration
Single
Frequency
2.17 GHz
Gain
18.9 dB
Gate to Source Voltage (Vgs)
10 V
Max Frequency
2.17 GHz
Max Operating Temperature
225 °C
Min Operating Temperature
225 °C
Number of Elements
1
Output Power
6.3 W
Test Current
450 mA

Compliance Documents

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