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NXP Semiconductors AFT09MS031GNR1

Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
TO-270-2
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
547.996282 mg

Technical

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Drain to Source Breakdown Voltage
40 V
Drain to Source Voltage (Vdss)
40 V
Frequency
870 MHz
Gain
17.2 dB
Gate to Source Voltage (Vgs)
12 V
Max Operating Temperature
225 °C
Min Operating Temperature
-40 °C
Number of Elements
1
Output Power
31 W
Test Current
500 mA
Test Voltage
13.6 V
Voltage Rating
40 V

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