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NXP Semiconductors AFT09MS007NT1

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
3
Weight
280.00824 mg

Technical

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related specs
Continuous Drain Current (ID)
3 A
Current Rating
10 µA
Drain to Source Voltage (Vdss)
30 V
Frequency
870 MHz
Gain
15.2 dB
Gate to Source Voltage (Vgs)
12 V
Max Operating Temperature
150 °C
Max Power Dissipation
114 W
Min Operating Temperature
-40 °C
Number of Elements
1
Output Power
7.3 W
Test Current
100 mA
Test Voltage
7.5 V
Voltage Rating
30 V

Compliance Documents

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