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NXP Semiconductors AFT05MS006NT1

RF Power Transistor, 0.136 to 0.941 GHz, 6 W, 18.3 dB, 7.5 V, PLD-1.5W, LDMOS

Product Details

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Compliance

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RoHS
Compliant

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Technical

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Frequency
520 MHz
Gain
18.3 dB
Gate to Source Voltage (Vgs)
12 V
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Output Power
6 W
Packaging
Tape & Reel (TR)
Test Current
100 mA
Test Voltage
7.5 V
Voltage Rating
30 V

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