NXP Semiconductors AFT05MS006NT1

Name: AFT05MS006NT1
Availability: OutOfStock

RF Power Transistor, 0.136 to 0.941 GHz, 6 W, 18.3 dB, 7.5 V, PLD-1.5W, LDMOS

Product Details

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RoHS

Compliant

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Contact Plating

Tin

Mount

Surface Mount

Number of Pins

3

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Frequency

520 MHz

Gain

18.3 dB

Gate to Source Voltage (Vgs)

12 V

Max Operating Temperature

150 °C

Min Operating Temperature

-40 °C

Output Power

6 W

Packaging

Tape & Reel (TR)

Test Current

100 mA

Test Voltage

7.5 V

Voltage Rating

30 V

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