Skip to main content

NXP Semiconductors AFM907NT1

Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V, HVSON16, RoHS

Product Details

Find similar products  

Compliance

Select to search
related specs
RoHS
Non-Compliant

Dimensions

Select to search
related specs
Height
1 mm

Technical

Select to search
related specs
Drain to Source Voltage (Vdss)
30 V
Gate to Source Voltage (Vgs)
12 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
65.7 W

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us