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NXP Semiconductors 2N7002P215

60V 360mA 1.6´Î@10V500mA 350mW 2.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
1.6 Ω

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Technical

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Continuous Drain Current (ID)
360 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.3 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Dual Supply Voltage
60 V
Max Operating Temperature
150 °C
Max Power Dissipation
350 mW
Min Operating Temperature
-55 °C
Nominal Vgs
1.75 V
Number of Elements
1
Power Dissipation
420 mW
Rds On Max
1.6 Ω
Resistance
1.6 Ω
Rise Time
1.6 Ω
Threshold Voltage
1.75 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
3 ns

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