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NTE Electronics MJ10016

Transistor NPN Silicon Darlington 500V IC=50amp TO-3 Case With Base Emitter Speed Up Diode

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
8.89 mm

Physical

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Case/Package
TO-3
Mount
-65 °C
Number of Pins
2

Technical

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Collector Emitter Breakdown Voltage
500 V
Collector Emitter Saturation Voltage
5 V
Collector Emitter Voltage (VCEO)
700 V
Emitter Base Voltage (VEBO)
8 V
Max Collector Current
50 A
Max Operating Temperature
200 °C
Max Power Dissipation
200 °C
Min Operating Temperature
-65 °C
Polarity
NPN
Power Dissipation
250 W

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