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Nexperia PDTD114ETR

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 225 MHz 320 mW

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-236-3
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
100 mV
Max Collector Current
500 mA
Max Power Dissipation
320 mW
Packaging
Tape & Reel (TR)
Transition Frequency
225 MHz

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