Nexperia PDTC114ET-QR

Name: PDTC114ET-QR
Availability: OutOfStock

PDTC114ET-Q - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 k, R2 = 10 k

Product Details

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Height

1.1 mm

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Lifecycle Status

Production

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Ambient Temperature Range High

150 °C

Collector Base Voltage (VCBO)

50 V

Collector Emitter Breakdown Voltage

50 V

Collector Emitter Saturation Voltage

100 mV

Collector Emitter Voltage (VCEO)

50 V

Emitter Base Voltage (VEBO)

10 V

hFE Min

30

Max Collector Current

100 mA

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Number of Elements

1

Power Dissipation

250 mW

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