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Nexperia 2N7002BKMB,315

Power Field-Effect Transistor, 0.45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
DFN
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Obsolete

Technical

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related specs
Continuous Drain Current (ID)
450 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.6 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Dual Supply Voltage
60 V
Max Operating Temperature
150 °C
Max Power Dissipation
360 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
715 mW
Rds On Max
1.6 Ω
Rise Time
6 ns
Turn-Off Delay Time
12 ns
Turn-On Delay Time
5 ns

Compliance Documents

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