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Home Products Discrete Semiconductors Transistors MOSFETs NE3210S01-T1B-A

NEC NE3210S01-T1B-A

RF Small Signal Field-Effect Transistor, N-Channel

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related specs

Continuous Drain Current (ID)

10 mA

Drain to Source Breakdown Voltage

4 V

Power Dissipation

165 mW

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