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Microchip DN3535N8-G

Trans MOSFET N-CH Si 350V 0.23A 4-Pin(3+Tab) SOT-89 T/R

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
10 Ω

Dimensions

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Height
1.6 mm
Length
4.6 mm
Width
2.6 mm

Physical

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Case/Package
SOT-89
Contact Plating
Tin
Mount
-55 °C
Number of Pins
4
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
230 mA
Drain to Source Breakdown Voltage
350 V
Drain to Source Resistance
10 Ω
Drain to Source Voltage (Vdss)
10 Ω
Element Configuration
Single
Fall Time
20 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
360 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
10 Ω
Rise Time
20 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
15 ns

Compliance Documents

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