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Microchip 2N7002-G

Power Field-Effect Transistor, 0.25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
930 µm
Length
2.92 mm
Width
IBS

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000

Supply Chain

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Lifecycle Status
Production

Technical

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Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
115 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
7.5 Ω
Drain to Source Voltage (Vdss)
7.5 Ω
Element Configuration
Single
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.12 mm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
360 mW
Rds On Max
7.5 Ω
Turn-Off Delay Time
20 ns
Turn-On Delay Time
20 ns

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