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Microchip 2N6661

Mosfet N-channel Enhancement Mode 90V 4 Ohm

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
6.604 mm

Physical

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Case/Package
TO-39
Contact Plating
Gold
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
350 mA
Drain to Source Breakdown Voltage
90 V
Drain to Source Resistance
4 Ω
Drain to Source Voltage (Vdss)
90 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Operating Temperature
150 °C
Max Power Dissipation
6.25 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Bulk
Power Dissipation
6.25 W
Rds On Max
4 Ω
Threshold Voltage
800 mV
Turn-Off Delay Time
10 ns
Turn-On Delay Time
10 ns

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