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Home Products Discrete Semiconductors Transistors MOSFETs 2N6660

Microchip 2N6660

2N6660 Series 60 V 3 Ohm Through Hole N-Channel HEXFET Mosfet - TO-205AD (TO-39)
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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
6.604 mm

Physical

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Case/Package
TO-39-3
Contact Plating
Gold
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Ambient Temperature Range High
150 °C
Continuous Drain Current (ID)
410 mA
Current
11:00 AM
Drain to Source Breakdown Voltage
11 A
Drain to Source Resistance
3 Ω
Drain to Source Voltage (Vdss)
3 Ω
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Bulk
Power Dissipation
6.25 W
Rds On Max
3 Ω
Turn-Off Delay Time
10 ns
Turn-On Delay Time
10 ns
Voltage
8542390000, 8542390000|8542390000, 8542390000|8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000

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