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IXYS IXTT110N10L2

N-Channel 100 V 18 mOhm 600 W SMT Power Mosfet - TO-268

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
18 mΩ

Physical

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Case/Package
TO-268
Mount
-55 °C

Technical

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Continuous Drain Current (ID)
110 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
18 mΩ
Element Configuration
Single
Fall Time
24 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
10.5 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
600 W
Rds On Max
18 mΩ
Rise Time
130 ns
Turn-Off Delay Time
99 ns

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