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IXYS IXTT02N450HV

Single N-Channel 4500 V 625 Ohm 10.6 nC 113 W Silicon SMT Mosfet - TO-268

Product Details

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Compliance

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RoHS
750 Ω

Physical

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Case/Package
TO-268
Mount
-55 °C

Technical

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Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
4.5 kV
Drain to Source Resistance
750 Ω
Drain to Source Voltage (Vdss)
750 Ω
Element Configuration
Single
Fall Time
143 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
256 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
113 W
Rds On Max
750 Ω
Rise Time
48 ns
Turn-Off Delay Time
28 ns

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