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IXYS IXTN600N04T2

N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
1.05 mΩ

Dimensions

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Height
12.22 mm

Physical

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Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
600 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.3 mΩ
Drain to Source Voltage (Vdss)
1.3 mΩ
Fall Time
250 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
40 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Nominal Supply Current
200 A
Number of Channels
1
Number of Drivers
1
Number of Elements
1
Number of Outputs
1
Output Current
600 A
Output Voltage
40 V
Power Dissipation
940 W
Rds On Max
1.05 mΩ
Rise Time
20 ns
Turn-Off Delay Time
90 ns
Turn-On Delay Time
40 ns

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