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IXYS IXTN200N10L2

N-Channel 100 V 11 mOhm 540 nC 830 W Power MOSFET - SOT-227

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT-227-4
Mount
Chassis Mount
Number of Pins
4

Technical

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Continuous Drain Current (ID)
178 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
11 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
23 nF
Max Operating Temperature
150 °C
Max Power Dissipation
830 W
Power Dissipation
830 W
Rds On Max
11 mΩ
Resistance
11 MΩ

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