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IXYS IXTK140N20P

Single N-Channel 200 V 18 mOhm 800 W Power MOSFET - TO-264

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
18 MΩ

Physical

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Case/Package
TO-264
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
140 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
18 mΩ
Element Configuration
Single
Fall Time
90 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.5 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Power Dissipation
800 W
Rds On Max
18 mΩ
Resistance
18 MΩ
Rise Time
18 mΩ
Threshold Voltage
5 V
Turn-Off Delay Time
35 ns

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