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IXYS IXTH80N65X2

Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
25.66 mm

Physical

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Case/Package
TO-247-3
Mount
Through Hole

Technical

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Continuous Drain Current (ID)
80 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
38 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
7.753 nF
Manufacturer Package Identifier
IXTH80N65X2
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
890 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
890 W
Rds On Max
40 mΩ
Turn-Off Delay Time
72 ns
Turn-On Delay Time
36 ns

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