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IXYS IXFP4N100Q

IXYS SEMICONDUCTOR IXFP4N100Q Power MOSFET, N Channel, 4 A, 1 kV, 3 ohm, 10 V, 5 V

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
3 Ω

Physical

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Case/Package
TO-220
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
4:00 AM
Drain to Source Breakdown Voltage
4 A
Drain to Source Resistance
3 Ω
Drain to Source Voltage (Vdss)
3 Ω
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.05 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
150 W
Rds On Max
3 Ω
Resistance
3 Ω
Rise Time
3 Ω
Threshold Voltage
5 V
Turn-Off Delay Time
15 ns

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