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IXYS IXFN82N60P

Single N-Channel 600 V 1040 W 240 nC Silicon Chassis Mount Mosfet - SOT-227B

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
75 mΩ

Dimensions

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Height
9.6 mm
Length
38.2 mm
Width
25.07 mm

Physical

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Case/Package
SOT-227-4
Mount
Chassis Mount, Panel
Number of Pins
4

Technical

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Continuous Drain Current (ID)
72 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
750 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
24 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
23 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1.04 kW
Min Operating Temperature
-55 °C
Power Dissipation
1.04 kW
Rds On Max
75 mΩ
Rise Time
23 ns
Turn-Off Delay Time
79 ns
Turn-On Delay Time
28 ns

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